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CD4511BMS
December 1992
CMOS BCD-to-7-Segment Latch Decoder Drivers
Pinout
CD4511BMS TOP VIEW
Features
* High Voltage Type (20V Rating) * High Output Sourcing Capability up to 25mA * Input Latches for BCD Code Storage * Lamp Test and Blanking Capability * 7 Segment Outputs Blanked for BCD Input Codes > 1001 * 100% Tested for Quiescent Current at 20V * 5V, 10V and 15V Parametric Ratings * Maximum Input Current of 1A at 18V Over Full Package Temperature Range; 100nA at 18V and +25oC
B C LT BL
1 2 3 4
16 VDD 15 f 14 g 13 a 12 b 11 c 10 d 9e
LE/STROBE 5 D A VSS 6 7 8
Applications
* Driving Common Cathode LED Displays * Multiplexing with Common Cathode LED Displays * Driving Incandescent Displays * Driving Low Voltage Fluorescent Displays
LT 3 13 A 7 12 1 L A T C H D E C O D E R D R I V E R 11 10 9 15 14 5 4
Functional Diagram
Description
CD4511BMS is a BCD-to-7-Segment latch decoder drivers constructed with CMOS logic and n-p-n bipolar transistor output devices on a single monolithic structure. These devices combine the low quiescent power dissipation and high noise immunity features of Intersil CMOS with n-p-n bipolar output transistors capable of sourcing up to 25mA. This capability allows the CD4511BMS types to drive LED's and other displays directly. Lamp Test (LT), Blanking (BL), and Latch Enable or Strobe inputs are provided to test the display, shut off or intensity modulate it, and store or strobe a BCD code, respectively. Several different signals may be multiplexed and displayed when external multiplexing circuitry is used. These devices are similar to the type MC14511. The CD4511BMS is supplied in these 16-lead outline packages: Braze Seal DIP Frit Seal DIP Ceramic Flatpack H4W H2R H6W
B BCD INPUTS C
a b c d e f g
7 SEGMENT OUTPUTS
2
D
6
LE/STROBE VSS = 8 VDD = 16
BL
7-Segment Display
a gb c d
f e
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright (c) Intersil Corporation 1999
File Number
3339
7-1169
Specifications CD4511BMS
Absolute Maximum Ratings
DC Supply Voltage Range, (VDD) . . . . . . . . . . . . . . . -0.5V to +20V (Voltage Referenced to VSS Terminals) Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VDD +0.5V DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .10mA Operating Temperature Range . . . . . . . . . . . . . . . . -55oC to +125oC Package Types D, F, K, H Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . +265oC At Distance 1/16 1/32 Inch (1.59mm 0.79mm) from case for 10s Maximum
Reliability Information
Thermal Resistance . . . . . . . . . . . . . . . . ja jc Ceramic DIP and FRIT Package . . . . . 80oC/W 20oC/W Flatpack Package . . . . . . . . . . . . . . . . 70oC/W 20oC/W Maximum Package Power Dissipation (PD) at +125oC For TA = -55oC to +100oC (Package Type D, F, K) . . . . . . 500mW For TA = +100oC to +125oC (Package Type D, F, K). . . . . . Derate Linearity at 12mW/oC to 200mW Device Dissipation per Output Transistor . . . . . . . . . . . . . . . 100mW For TA = Full Package Temperature Range (All Package Types) Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS GROUP A SUBGROUPS 1 2 VDD = 18V, VIN = VDD or GND Input Leakage Current IIL VIN = VDD or GND VDD = 20 3 1 2 VDD = 18V Input Leakage Current IIH VIN = VDD or GND VDD = 20 3 1 2 VDD = 18V Output Voltage Output Voltage VOL15 VOH15 VDD = 15V, No Load VDD = 15V, No Load (Note 3) 3 1, 2, 3 1 2 3 Output Current (Sink) Output Current (Sink) Output Current (Sink) Output Drive Voltage Output Drive Voltage Output Drive Voltage N Threshold Voltage P Threshold Voltage Functional IOL5 IOL10 IOL15 LVOH5 VDD = 5V, VOUT = 0.4V VDD = 10V, VOUT = 0.5V VDD = 15V, VOUT = 1.5V VDD = 5V, IOH = -20mA 1 1 1 1 1 1 1 1 7 7 8A 8B 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 +25oC, +25oC, LIMITS TEMPERATURE +25oC +125oC -55oC +25oC +125oC -55oC +25oC +125oC -55oC +125oC, +25oC +125oC -55oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +125oC -55oC +125oC, -55oC 3.5 11 1.5 4 V V V V -55oC MIN -100 -1000 -100 14.1 14.2 14.0 1 2.6 6.8 3.4 8.6 13.7 -2.8 0.7 -0.7 2.8 MAX 10 1000 10 100 1000 100 50 UNITS A A A nA nA nA nA nA nA mV V V V mA mA mA V V V V V V
PARAMETER Supply Current
SYMBOL IDD
CONDITIONS (NOTE 1) VDD = 20V, VIN = VDD or GND
LVOH10 VDD = 10V, IOH = -20mA LVOH15 VDD = 15V, IOH = -20mA VNTH VPTH F VDD = 10V, ISS = -10A VSS = 0V, IDD = 10A VDD = 2.8V, VIN = VDD or GND VDD = 20V, VIN = VDD or GND VDD = 18V, VIN = VDD or GND VDD = 3V, VIN = VDD or GND
VOH > VOL < VDD/2 VDD/2
Input Voltage Low (Note 2) Input Voltage High (Note 2) Input Voltage Low (Note 2) Input Voltage High (Note 2)
VIL VIH VIL VIH
VDD = 5V, VOH > 3.6V, VOL < 0.5V VDD = 5V, VOH > 3.6V, VOL < 0.5V VDD = 15V, VOH > 12.6V, VOL < 1.5V VDD = 15V, VOH > 12.6V, VOL < 1.5V
+25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC
NOTES: 1. All voltages referenced to device GND, 100% testing being implemented. 2. Go/No Go test with limits applied to inputs.
3. For accuracy, voltage is measured differentially to VDD
7-1170
Specifications CD4511BMS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS GROUP A SUBGROUPS TEMPERATURE 9 10, 11 TPLH VDD = 5V, VIN = VDD or GND 9 10, 11 TTHL VDD = 5V, VIN = VDD or GND 9 10, 11 Transition Time TTLH VDD = 5V, VIN = VDD or GND 9 10, 11 NOTES: 1. CL = 50pF, RL = 200K, Input TR, TF < 20ns. 2. -55oC and +125oC limits guaranteed, 100% testing being implemented. +25oC +125oC, -55oC LIMITS MIN MAX 1040 1404 1320 1782 310 419 80 108 UNITS ns ns ns ns ns ns ns ns
PARAMETER Propagation Delay Data to Output Propagation Delay Data to Output Transition Time
SYMBOL TPHL
CONDITIONS (NOTE 1, 2) VDD = 5V, VIN = VDD or GND
+25oC +125oC, -55oC
+25oC +125oC, -55oC
+25oC +125oC, -55oC
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER Supply Current SYMBOL IDD CONDITIONS VDD = 5V, VIN = VDD or GND NOTES 1, 2 TEMPERATURE -55oC, +25oC +125oC VDD = 10V, VIN = VDD or GND 1, 2 -55oC, +25oC +125oC VDD = 15V, VIN = VDD or GND 1, 2 -55oC, +25oC +125oC Output Voltage Output Voltage Output Voltage VOL VOL VOH VDD = 5V, No Load VDD = 10V, No Load VDD = 5V, No Load 1, 2 1, 2 1, 2 1, 2 1, 2 Output Voltage VOH VDD = 10V, No Load 1, 2 1, 2 1, 2 Output Current (Sink) IOL5 VDD = 5V, VOUT = 0.4V 1, 2 +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC +125oC -55oC +25oC +125oC -55oC +125oC -55oC Output Current (Sink) IOL10 VDD = 10V, VOUT = 0.5V 1, 2 +125oC -55oC Output Current (Sink) IOL15 VDD = 15V, VOUT = 1.5V 1, 2 +125oC -55oC Input Voltage Low Input Voltage High Propagation Delay Data to Output VIL VIH TPHL VDD = 10V, VOH > 9V, VOL < 1V VDD = 10V, VOH > 9V, VOL < 1V VDD = 10V VDD = 15V 1, 2 1, 2 1, 2, 3 1, 2, 3 +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC +25oC 4.1 4.2 4.0 9.1 9.2 9.0 0.36 0.64 0.9 1.6 2.4 4.2 +7 50 3 420 300 mV V V V V V V mA mA mA mA mA mA V V ns ns MIN MAX 5 150 10 300 10 600 50 UNITS A A A A A A mV
7-1171
Specifications CD4511BMS
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS(Continued) LIMITS PARAMETER Propagation Delay Data to Output Propagation Delay (BT) SYMBOL TPLH CONDITIONS VDD = 10V VDD = 15V TPHL VDD = 5V VDD = 10V VDD = 15V Propagation Delay (BT) TPLH VDD = 5V VDD = 10V VDD = 15V Propagation Delay (LT) TPHL VDD = 5V VDD = 10V VDD = 15V Propagation Delay (LT) TPLH VDD = 5V VDD = 10V VDD = 15V Transition Time TTHL VDD = 10V VDD = 15V Transition Time TTLH VDD = 10V VDD = 15V Minimum Data Setup Time TS VDD = 5V VDD = 10V VDD = 15V Minimum Data Hold Time TH VDD = 5V VDD = 10V VDD = 15V Minimum Strobe Pulse Width TW VDD = 5V VDD = 10V VDD = 15V Output Drive Voltage LVOH5 VDD = 5V, IOH = -10mA NOTES 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2 1, 2 1, 2 VDD = 5V, IOH = -20mA VDD = 5V, IOH = -25mA 1, 2 1, 2 1, 2 Output Drive Voltage LVOH10 VDD = 10V, IOH = -10mA 1, 2 1, 2 1, 2 VDD = 10V, IOH = -20mA 1, 2 1, 2 VDD = 10V, IOH = -25mA 1, 2 1, 2 TEMPERATURE +25oC +25 C +25oC +25
oC o
MIN 3.9 3.9 3.8 3.55 3.1 3.4 9.0 9.0 8.85 8.4 8.7 8.3 8.6
MAX 520 360 700 350 250 800 350 300 500 250 170 300 150 100 185 160 60 50 150 70 40 0 0 0 400 160 100 -
UNITS ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns V V V V V V V V V V V V V
+25oC +25oC +25
oC
+25o
C
+25oC +25
oC
+25oC +25 C +25o C +25oC +25oC +25
oC o
+25oC +25 C +25
oC o
+25oC +25
oC
+25oC +25oC +25
oC
+25oC +25oC +25oC +25 C +125oC -55oC -55oC +25oC -55oC +25oC +125oC -55oC +125oC -55oC +25oC -55oC
o
7-1172
Specifications CD4511BMS
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS(Continued) LIMITS PARAMETER Output Drive Voltage SYMBOL LVOH15 CONDITIONS VDD = 15V, IOH = -10mA NOTES 1, 2 1, 2 1, 2 VDD = 15V, IOH = -20mA 1, 2 1, 2 VDD = 15V, IOH = -25mA 1, 2 1, 2 Input Capacitance NOTES: 1. All voltages referenced to device GND. 2. The parameters listed on Table 3 are controlled via design or process and are not directly tested. These parameters are characterized on initial design release and upon design changes which would affect these characteristics. 3. CL = 50pF, RL = 200K, Input TR, TF < 20ns. TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER Supply Current N Threshold Voltage N Threshold Voltage Delta P Threshold Voltage P Threshold Voltage Delta Functional SYMBOL IDD VNTH VTN VTP VTP F CONDITIONS VDD = 20V, VIN = VDD or GND VDD = 10V, ISS = -10A VDD = 10V, ISS = -10A VSS = 0V, IDD = 10A VSS = 0V, IDD = 10A VDD = 18V, VIN = VDD or GND VDD = 3V, VIN = VDD or GND Propagation Delay Time TPHL TPLH VDD = 5V 1, 2, 3, 4 +25oC NOTES 1, 4 1, 4 1, 4 1, 4 1, 4 1 TEMPERATURE +25oC +25oC +25oC +25oC +25oC +25oC MIN -2.8 0.2 VOH > VDD/2 MAX 25 -0.2 1 2.8 1 VOL < VDD/2 1.35 x +25oC Limit UNITS A V V V V V CIN Any Input 1, 2 TEMPERATURE +25oC +125 C -55oC +125oC -55oC +25oC -55
oC o
MIN 14.0 14.0 13.9 13.5 13.75 13.5 13.65 -
MAX 7.5
UNITS V V V V V V V pF
+25o
C
ns
NOTES: 1. All voltages referenced to device GND. 2. CL = 50pF, RL = 200K, Input TR, TF < 20ns.
3. See Table 2 for +25oC limit. 4. Read and Record
TABLE 5. BURN-IN AND LIFE TEST DELTA PARAMETERS +25oC PARAMETER Supply Current - MSI-2 Output Current (Sink) Output Current (Source) SYMBOL IDD IOL5 IOH5A 1.0A 20% x Pre-Test Reading 20% x Pre-Test Reading DELTA LIMIT
TABLE 6. APPLICABLE SUBGROUPS CONFORMANCE GROUP Initial Test (Pre Burn-In) Interim Test 1 (Post Burn-In) Interim Test 2 (Post Burn-In) MIL-STD-883 METHOD 100% 5004 100% 5004 100% 5004 GROUP A SUBGROUPS 1, 7, 9 1, 7, 9 1, 7, 9 READ AND RECORD IDD, IOL5, IOH5A IDD, IOL5, IOH5A IDD, IOL5, IOH5A
7-1173
Specifications CD4511BMS
TABLE 6. APPLICABLE SUBGROUPS (Continued) CONFORMANCE GROUP PDA (Note 1) Interim Test 3 (Post Burn-In) PDA (Note 1) Final Test Group A Group B Subgroup B-5 Subgroup B-6 Group D MIL-STD-883 METHOD 100% 5004 100% 5004 100% 5004 100% 5004 Sample 5005 Sample 5005 Sample 5005 Sample 5005 GROUP A SUBGROUPS 1, 7, 9, Deltas 1, 7, 9 1, 7, 9, Deltas 2, 3, 8A, 8B, 10, 11 1, 2, 3, 7, 8A, 8B, 9, 10, 11 1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas 1, 7, 9 1, 2, 3, 8A, 8B, 9 Subgroups 1, 2 3 Subgroups 1, 2, 3, 9, 10, 11 IDD, IOL5, IOH5A READ AND RECORD
NOTE: 1. 5% Parameteric, 3% Functional; Cumulative for Static 1 and 2.
TABLE 7. TOTAL DOSE IRRADIATION MIL-STD-883 METHOD 5005 TEST PRE-IRRAD 1, 7, 9 POST-IRRAD Table 4 READ AND RECORD PRE-IRRAD 1, 9 POST-IRRAD Table 4
CONFORMANCE GROUPS Group E Subgroup 2
TABLE 8. BURN-IN AND IRRADIATION TEST CONNECTIONS OSCILLATOR FUNCTION Static Burn-In 1 (Note 1) Static Burn-In 2 (Note 1) Dynamic BurnIn (Note 1) Irradiation (Note 2) NOTES: 1. Each pin except VDD and GND will have a series resistor of 10K 5%, VDD = 18V 0.5V 2. Each pin except VDD and GND will have a series resistor of 47K 5%; Group E, Subgroup 2, sample size is 4 dice/wafer, 0 failures, VDD = 10V 0.5V OPEN 9-15 9-15 9-15 9-15 GROUND 1-8 8 5, 8 8 VDD 16 1-7, 16 3, 4, 16 1-7, 16 1, 2, 7 6 9V -0.5V 50kHz 25kHz
7-1174
CD4511BMS Logic Diagram
VDD DRIVER LOGIC IOH +
(BL) P TG N
*
VSS A
*
P TG N
VOH OUTPUT DRIVERS a
P TG N
b
B
*
P TG N
c
P TG N
d
C
*
P TG N
e P TG N
f
D
*
P TG N
g
LE/STROBE
* *
LT VDD
*
FIGURE 1. TRUTH TABLE LE X X 0 0 0 0 0 0 BI X 0 1 1 1 1 1 1 LT 0 1 1 1 1 1 1 1 D X X 0 0 0 0 0 0 C X X 0 0 0 0 1 1 B X X 0 0 1 1 0 0 A X X 0 1 0 1 0 1 a 1 0 1 0 1 1 0 1 b 1 0 1 1 1 1 1 0 c 1 0 1 1 0 1 1 1
ALL INPUTS ARE PROTECTED BY CMOS PROTECTION NETWORK VSS
d 1 0 1 0 1 1 0 1
e 1 0 1 0 1 0 0 0
f 1 0 1 0 0 0 1 1
g 1 0 0 0 1 1 1 1
DISPLAY
Blank
7-1175
CD4511BMS
TRUTH TABLE (Continued) LE 0 0 0 0 0 0 0 0 0 0 1 BI 1 1 1 1 1 1 1 1 1 1 1 LT 1 1 1 1 1 1 1 1 1 1 1 D 0 0 1 1 1 1 1 1 1 1 X C 1 1 0 0 0 0 1 1 1 1 X B 1 1 0 0 1 1 0 0 1 1 X A 0 1 0 1 0 1 0 1 0 1 X a 0 1 1 1 0 0 0 0 0 0 b 0 1 1 1 0 0 0 0 0 0 c 1 1 1 1 0 0 0 0 0 0 d 1 0 1 0 0 0 0 0 0 0 * e 1 0 1 0 0 0 0 0 0 0 f 1 0 1 1 0 0 0 0 0 0 g 1 0 1 1 0 0 0 0 0 0 Blank Blank Blank Blank Blank Blank * DISPLAY
X = Don't Care * Depends on BCD code previously applied when LE = 0 NOTE: Display is blank for all illegal input codes (BCD > 1001).
Typical Performance Characteristics
OUTPUT LOW (SINK) CURRENT (IOL) (mA) PROPAGATION DELAY TIME (tPLH) (ns) AMBIENT TEMPERATURE (TA) = +25oC 700 SUPPLY VOLTAGE (VDD) = 5V 600 500 400 300 200 100 AMBIENT TEMPERATURE (TA) = +25oC 0 25 50 75 100 10V 15V
30 25 20 15 10 5
GATE-TO-SOURCE VOLTAGE (VGS) = 15V
10V
5V 0 5 10 15 DRAIN-TO-SOURCE VOLTAGE (VDS) (V)
LOAD CAPACITANCE (CL) (pF)
FIGURE 2. TYPICAL OUTPUT LOW (SINK) CURRENT CHARACTERISTICS
FIGURE 3. TYPICAL DATA-TO-OUTPUT, LOW-TO-HIGH-LEVEL PROPAGATION DELAY TIME AS A FUNCTION OF LOAD CAPACITANCE
7-1176
CD4511BMS Typical Performance Characteristics
700 PROPAGATION DELAY TIME (tPLH) (ns) 600 TRANSITION TIME (tTLH) (ns) 500 400 300 10V 200 15V 100 SUPPLY VOLTAGE (VDD) = 5V AMBIENT TEMPERATURE (TA) = +25oC 60 SUPPLY VOLTAGE (VDD) = 5V 50 40 30 20 10 10V 15V AMBIENT TEMPERATURE (TA) = +25oC
0
25
50
75
100
0
25
50
75
100
LOAD CAPACITANCE (CL) (pF)
LOAD CAPACITANCE (CL) (pF)
FIGURE 4. TYPICAL DATA-TO-OUTPUT, HIGH-TO-LOW-LEVEL PROPAGATION DELAY TIME AS A FUNCTION OF LOAD CAPACITANCE
AMBIENT TEMPERATURE (TA) = +25oC 500 TRANSITION TIME (tTHL) (ns)
FIGURE 5. TYPICAL LOW-TO-HIGH-LEVEL TRANSITION TIME AS A FUNCTION OF LOAD CAPACITANCE
SUPPLY VOLTAGE (VDD) = 5V
OUTPUT SOURCE CURRENT (IOH) (mA)
AMBIENT TEMPERATURE (TA) = +25oC
25 20 15 10 5
SUPPLY VOLTAGE (VDD) = 15V
10V 5V
400
300 10V 200 15V
100
0
100
200 300 400 500 LOAD CAPACITANCE (CL) (pF)
0 0.5 1 1.5 SUPPLY VOLTAGE - OUTPUT DRIVE VOLTAGE (VDD - VOH) (V)
FIGURE 6. TYPICAL HIGH-TO-LOW TRANSITION TIME AS A FUNCTION OF LOAD CAPACITANCE
105 8 DYNAMIC POWER DISSIPATION (PD) (W)
FIGURE 7. TYPICAL VOLTAGE DROP (VDD TO OUTPUT) vs OUTPUT SOURCE CURRENT AS A FUNCTION OF SUPPLY
6 AMBIENT TEMPERATURE (T ) = +25oC A 4 2 104 8 6 4 SUPPLY VOLTS (VDD) = 15V 2
103 8
6 4 2 102 8 6 4 2
10V 10V 5V
101 8
6 4 2
CL = 50pF CL = 15pF
2 4 68 2 4 68 2 4 68 2 4 68 2 4 68
100 10-2 10-1 100 101 FREQUENCY (f) (kHz) 102 103
FIGURE 8. TYPICAL DYNAMIC POWER DISSIPATION CHARACTERISTICS
7-1177
CD4511BMS Applications
Interfacing with Various Displays
VDD LT VDD
BCD INPUTS
A B C D LE BL
LATCH 8 DECODER + VOH VDD
a b c d e f g
ISEG
R R R R R R R VDF +
TO VDD
VSS
CD4511BMS
VSS LED 7-SEGMENT DISPLAY
DUTY CYCLE = 100% ISEG = IDIODEAVG. = 20mA AT LUMINOUS INTENSITY/SEGMENT = 250cd R= VOH - VDF ISEG
FIGURE 9. DRIVING COMMON CATHODE 7-SEGMENT LED DISPLAYS (EXAMPLE HEWLET-PACKARD 5082-7740)
LT A B CD4511BMS C D
VDD
LT A B CD4511BMS C D LE VDD 1.6V AC OR DC BL
VDD = 5V
a b c d e f g
a b c d e f g
VDD R 400 VDD
LE BL VDD
R 400
VSS
VSS
A MEDIUM BRIGHTNESS INTENSITY DISPLAY CAN BE OBTAINED WITH LOW VOLTAGE FLUORESCENT DISPLAYS SUCH AS THE TUNG-SOL DIGIVAC S/G* SERIES * Trademark Tung-Sol Division Wagner Electric Co.
2 OF 7 SEGMENTS SHOWN CONNECTED RESISTORS R FROM VDD TO EACH 7-SEGMENT DRIVER OUTPUT ARE CHOSEN TO KEEP ALL NUMITRON SEGMENTS SLIGHTLY ON AND WARM
FIGURE 10. DRIVING LOW VOLTAGE FLOURESCENT DISPLAYS
FIGURE 11. DRIVING INCANDESCENT DISPLAYS (RCA NUMITRON DR2000 SERIES DISPLAYS)
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
1178
CD4511BMS Applications
Interfacing with Various Displays (Continued)
LT VDD
TRANSISTORS T1 - T4 (2N3053 OR 2N2102) HAVE IC MAX. RATING > 7 x ISEG DUTY CYCLE = 25% ISEG = (IDIODEAVG) x 4 R= (VOH - VDF-VCE) ISEG VDD
C D LE
CD4511BMS
MULTIPLEXING SCHEME SHOWING 2 OF 7 SEGMENTS CONNECTED
A B
a b c d e f g
R ISEG
R + VDF + VCE T2 VSS T3 VSS T4 VSS
BL VSS
+ - VOH
VO1 1 2 V02 CD4024BMS VO3
12 11 9
2 3 1
Q0 Q1 CD4555BMS Q2 Q3
4 5 6 7
T1 VSS
VSS
FIGURE 12. MULTIPLEXING WITH COMMON CATHODE 7-SEGMENT LED DISPLAYS (EXAMPLE HEWLET-PACKARD 5082-7404 4 CHARACTER DISPLAY OR 4 DISCRETE MONOSANTO MAN 3 DISPLAYS)
Waveforms
tr DATA INPUT tTHL tTLH VDD OUTPUT tPHL tr, tf = 20ns tPLH 90% 50% 10% OUTPUT 0 20ns STROBE 90% 50% 10% tr, tf = 20ns 20ns tf VDD 90% 50% 10% LE 0 DATA INPUTS 50% 10% 20ns 20ns 10% tSU 90% 90% 50% tHOLD 50% VDD 0 FOR SETUP FOR HOLD 0 VDD 0 VDD
tW
FIGURE 13. DYNAMIC WAVEFORMS
Chip Dimensions and Pad Layout
Dimensions in parenthesis are in millimeters and are derived from the basic inch dimensions as indicated. Grid graduations are in mils (10-3 inch).
METALLIZATION: PASSIVATION:
Thickness: 11kA - 14kA,
AL.
10.4kA - 15.6kA, Silane 0.0198 inches - 0.0218 inches
BOND PADS: 0.004 inches X 0.004 inches MIN DIE THICKNESS:
7-1179

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